Synthesis of Inorganic Structural Isomers By Diffusion‐Constrained Self‐Assembly of Designed Precursors: A Novel Type of Isomerism

The structure of precursors is used to control the formation of six possible structural isomers that contain four structural units of PbSe and four structural units of NbSe₂: [(PbSe)_1.14]₄[NbSe₂]₄, [(PbSe)_1.14]₃[NbSe₂]₃[(PbSe)_1.14]₁[NbSe₂]₁, [(PbSe)_1.14]₃[NbSe₂]₂[(PbSe)_1.14]₁[NbSe₂]₂, [(PbSe)_1.14]₂[NbSe₂]₃[(PbSe)_1.14]₂[NbSe₂]₁, [(PbSe)_1.14]₂[NbSe₂]₂[(PbSe)_1.14]₁[NbSe₂]₁[(PbSe)_1.14]₁[NbSe₂]₁, [(PbSe)_1.14]₂[NbSe₂]₁[(PbSe)_1.14]₁[NbSe₂]₂[(PbSe)_1.14]₁[NbSe₂]₁. The electrical properties of these compounds vary with the nanoarchitecture. For each pair of constituents, over 20 000 new compounds, each with a specific nanoarchitecture, are possible with the number of structural units equal to 10 or less. This provides opportunities to systematically correlate structure with properties and hence optimize performance.     

Methane as a Selectivity Booster in the Arc‐Discharge Synthesis of Endohedral Fullerenes: Selective Synthesis of the Single‐Molecule Magnet Dy2TiC@C80 and Its Congener Dy2TiC2@C80

The use of methane as a reactive gas dramatically increases the selectivity of the arc‐discharge synthesis of M‐Ti‐carbide clusterfullerenes (M=Y, Nd, Gd, Dy, Er, Lu). Optimization of the process parameters allows the synthesis of Dy₂TiC@C₈₀‐I and its facile isolation in a single chromatographic step. A new type of cluster with an endohedral acetylide unit, M₂TiC₂@C₈₀, is discovered along with the second isomer of M₂TiC@C₈₀. Dy₂TiC@C₈₀‐(I,II) and Dy₂TiC₂@C₈₀‐I are shown to be single‐molecule magnets (SMM), but the presence of the second carbon atom in the cluster Dy₂TiC₂@C₈₀ leads to substantially poorer SMM properties.     

A large displacement formulation for anisotropic beam analysis

Summary The displacement of a beam can be conveniently resolved into a roto-translational section displacement and a section warping. The correct second order approximation of the strain is deduced accounting for large displacements and thus for large rotations. On the basis of displacement method, both linear and nonlinear formulations are given: the first one leads to the elastic section properties and to the correct characterization of section warping; the second one leads to the so-called geometric section stiffness, accounting for prestress. Both formulations are general with respect to elastic material properties, thus allowing to deal with aniso-tropic and unhomogeneous cross-sections. Elastic and geometric section rigidities here proposed can then be easily used in second order problems on beam frames: either initial buckling eigenvalue analyses, either large displacement incremental analyses.

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Sommario E' conveniente scomporre lo spostamento di un punto di una trave in una rototraslazione della sezione cui appartiene e in uno spostamento che deforma la sezione (in-gobbamento). Si deduce la corretta approssimazione al second'ordine della deformazione per grandi spostamenti e quindi grandi rotazioni. Vengono presentate sia la formulazione lineare che quella non lineare, basate sul metodo degli spostamenti: dalla prima si ottengono le caratteristiche elastiche della sezione e la corretta caratterizzazione dell'ingob-bamento; dalla seconda la cosiddetta rigidezza geometrica della sezione che tiene conto dello stato di presforzo. Entrambe le formulazioni sono generali per quanto riguarda le proprietà del materiale elastico, potendosi così considerare anche sezioni anisotrope e non omogenee. Le caratteristiche di rigidezza elastica e geometrica della sezione possono quindi facilmente essere usate in problemi del second'ordine su strutture a travi: sia analisi agli autovalori della stabilità, sia analisi incrementali con grandi spostamenti.

     

Lab on Fiber Technology for biological sensing applications

This review presents an overview of “Lab on Fiber” technologies and devices with special focus on the design and development of advanced fiber optic nanoprobes for biological applications. Depending on the specific location where functional materials at micro and nanoscale are integrated, “Lab on Fiber Technology” is classified into three main paradigms: Lab on Tip (where functional materials are integrated onto the optical fiber tip), Lab around Fiber (where functional materials are integrated on the outer surface of optical fibers), and Lab in Fiber (where functional materials are integrated within the holey structure of specialty optical fibers). This work reviews the strategies, the main achievements and related devices developed in the “Lab on Fiber” roadmap, discussing perspectives and challenges that lie ahead, with special focus on biological sensing applications.

     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Strong Asymptotics of the Orthogonal Polynomials with Respect to a Measure Supported on the Plane

We consider the orthogonal polynomials with respect to the measure over the whole complex plane. We obtain the strong asymptotic of the orthogonal polynomials in the complex plane and the location of their zeros in a scaling limit where n grows to infinity with N . The asymptotics are described in terms of three (probability) measures associated with the problem. The first measure is the limit of the counting measure of zeros of the polynomials, which is captured by the g‐function much in the spirit of ordinary orthogonal polynomials on the real line. The second measure is the equilibrium measure that minimizes a certain logarithmic potential energy, supported on a region K of the complex plane. The third measure is the harmonic measure of K ^c with a pole at ∞ . This appears as the limit of the probability measure given (up to the normalization constant) by the squared modulus of the n^th orthogonal polynomial times the orthogonality measure, i.e., The compact region K that is the support of the second measure undergoes a topological transition under the variation of the parameter in a double scaling limit near the critical point given by we observe the Hastings‐McLeod solution to Painlevé II in the asymptotics of the orthogonal polynomials. © 2014 Wiley Periodicals, Inc.